This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil? protection usually necessary in typical converters for lamp ballast.

High voltage capability
Very high switching speed
Applications
Four lamp electronic ballast for:
120 V mains in push-pull configuration
277 V mains in half bridge current feed configuration