This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size?" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Exceptional dv/dt capability
Application oriented characterization
Applications
Switching application
Applications
Switching application
| 屬性 | 數值 |
|---|---|
| 通道類型 | N |
| 最大連續漏極電流 | 80 A |
| 最大漏源電壓 | 55 V |
| 封裝類型 | D2PAK |
| 安裝類型 | 表面貼裝 |
| 引腳數目 | 3 |
| 最大漏源電阻值 | 6.5 mΩ |
| 通道模式 | 增強 |
| 最大柵閾值電壓 | 4V |
| 最小柵閾值電壓 | 2V |
| 最大功率耗散 | 300 W |
| 晶體管配置 | 單 |
| 最大柵源電壓 | ±20 V |
| 最高工作溫度 | +175 °C |
| 典型柵極電荷@Vgs | 142 nC @ 10 V |
| 長度 | 10.4mm |
| 寬度 | 9.35mm |
| 每片芯片元件數目 | 1 |
