This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET? H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
Low on-resistance
High avalanche ruggedness
Low gate drive power loss
Wettable flank package
Applications
Switching applications
| 屬性 | 數值 |
|---|---|
| 通道類型 | N |
| 最大連續漏極電流 | 40 A |
| 最大漏源電壓 | 30 V |
| 封裝類型 | PowerFLAT 5 x 6 |
| 安裝類型 | 表面貼裝 |
| 引腳數目 | 8 |
| 最大漏源電阻值 | 25 mΩ |
| 通道模式 | 增強 |
| 最大柵閾值電壓 | 1.5V |
| 最小柵閾值電壓 | 1V |
| 最大功率耗散 | 50 W |
| 晶體管配置 | 單 |
| 最大柵源電壓 | ±22 V |
| 每片芯片元件數目 | 1 |
| 寬度 | 5.1mm |
| 長度 | 6.2mm |
| 最高工作溫度 | +175 °C |
| 典型柵極電荷@Vgs | 4.5 nC @ 4.5 V |
