The Vishay surface mount P-channel SO-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 41mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 83W and continuous drain current of 28A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
? Halogen free
? Lead (Pb) free component
? Operating temperature ranges between -55°C and 150°C
? TrenchFET power MOSFET
? Half-bridge motor drives
? High voltage non-synchronous buck converters
? Load switches
? ANSI/ESD S20.20:2014
? BS EN 61340-5-1:2007
? IEC 61249-2-21
